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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5632 2N5633 2N5634 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL PARAMETER VCBO VCEO HAN INC Collector-emitter voltage Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature Collector-base voltage SEM GE 2N5632 2N5633 2N5634 2N5632 2N5633 2N5634 Open emitter OND IC CONDITIONS TOR UC VALUE 100 120 140 100 UNIT V Open base 120 140 V VEBO IC PD Tj Tstg Open collector 7 10 V A W ae ae TC=25ae 150 150 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.1 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N5632 VCEO(SUS) Collector-emitter sustaining voltage 2N5633 2N5634 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage 2N5632 ICEO Collector cut-off current IC=7A; IB=0.7A IC=10A ;IB=2A IC=10A ;IB=2A IC=5A ; VCE=5V VCE=50V; IB=0 VCE=60V; IB=0 VCE=70V; IB=0 IC=0.2A ;IB=0 CONDITIONS 2N5632 2N5633 2N5634 SYMBOL MIN 100 120 140 TYP. MAX UNIT V 1.0 3.0 2.5 1.5 V V V V ICEV IEBO Collector cut-off current 2N5633 1.0 mA 2N5634 VCE=ratedVCB; VBE(off)=1.5V TC=150ae VEB=7V; IC=0 Emitter cut-off current hFE DC current gain INCH GE S AN 2N5632 2N5633 2N5634 EMIC OND 25 20 15 TOR UC 1.0 5.0 1.0 100 80 60 mA mA IC=5A ; VCE=5V fT Transition frequency IC=1A ; VCE=20V 1.0 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5632 2N5633 2N5634 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.10mm) 3 |
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